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FDS9933A Datasheet PDF

Table of contents: Description Parameters Typical Application Maximum Ratings Features Pinout/Connection Diagram Related Models Datasheet

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Part Number：
FDS9933A
Category：
Discrete Semiconductor Products
Vendor：
Fairchild Semiconductor
Package Cooled：
SMD
D/C：
--
Description：
MOSFET P-CH DUAL 20V 3.8A 8SOIC

Price Break
2500
5000
10000
25000
Unit Price
.32400
.31700
.31100
.30500
Extended Price
810.00
1585.00
3110.00
7625.00

FDS9933A.pdf

File Size: 191.61KB

File page: 8

Fairchild Semiconductor

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Description

These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Parameters

Technical/Catalog Information	FDS9933A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	2 P-Channel (Dual)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	3.8A
Rds On (Max) @ Id, Vgs	75 mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) @ Vds	600pF @ 10V
Power - Max	2W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 4.5V
Package / Case	SO-8
FET Feature	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDS9933A FDS9933A FDS9933ATR ND FDS9933ATRND FDS9933ATR

Features

• -3.8 A, -20 V. R_DS(on) = 0.075 Ω @ V_GS = -4.5 V
R_DS(on) = 0.105 Ω @ V_GS= -2.5 V.
• Low gate charge ( 7nC typical ).
• Fast switching speed.
• High performance trench technology for extremely low R_DS(on).
• High power and current handling capability.

Maximum Ratings

Symbol	Parameter		Ratings	Units
V_DSS	Drain-Source Voltage		-20	V
V_GSS	Gate-Source Voltage		±8
I_D	Drain Current	– Continuous (Note 1a) –Pulsed	-3.8	A
			-20
P_D	Power Dissipation for Dual Operation		2	W
	Power Dissipation for Single Operation	(Note 1a) (Note 1b) (Note 1c)	1.6
			1
			0.9
T_J, T_STG	Operating and Storage Junction Temperature Range		–55 to +150	°C