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FDV301N Datasheet PDF

Table of contents: Description Parameters Maximum Ratings Features Pinout/Connection Diagram Related Models Datasheet

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Part Number：
FDV301N
Category：
Discrete Semiconductor Products
Vendor：
Fairchild Semiconductor
Package Cooled：
--
D/C：
--
Description：
MOSFET N-CH 25V 220MA SOT-23

Price Break
3000
6000
12000
Unit Price
.05640
.04800
.04080
Extended Price
169.20
288.00
489.60

FDV301N.pdf

File Size: 97.95KB

File page: 5

Fairchild Semiconductor

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Description

This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values.

Parameters

Technical/Catalog Information	FDV301N
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25° C	220mA
Rds On (Max) @ Id, Vgs	4 Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) @ Vds	9.5pF @ 10V
Power - Max	350mW
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	0.7nC @ 4.5V
Package / Case	SOT-23
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FDV301N FDV301N FDV301NTR ND FDV301NTRND FDV301NTR

Features

■25 V, 0.22 A continuous, 0.5 A Peak. R_DS(ON) = 5 Ω @ V_GS= 2.7 V R_DS(ON) = 4 Ω @ V_GS = 4.5 V.
■Very low level gate drive requirements allowing direct operation in 3V circuits. V_GS(th) < 1.5V.
■Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
■Replace multiple NPN digital transistors with one DMOS FET.

Maximum Ratings

Symbol	Parameter	FDV301N	Units
V_DSS , V_CC	Drain-Source Voltage, Power Supply Voltage	25	V
V_GSS , V_I	Gate-Source Voltage, V_IN	8	V
I_D , I_O	Drain/Output Current - Continuous	0.22	A
I_D , I_O	Drain/Output Current - Continuous	0.5	A
P_D	Maximum Power Dissipation	0.35	W
T_J,T_STG	Operating and Storage Temperature Range	-55 to 150	°C
E_SD	Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm)	6.0	kV